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10250 A3843 FR152 IN74AC 1N5395 AOU3N50 0603JBCT 1N5333D
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  Datasheet File OCR Text:
 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 50 Volt VDS * RDS(on)=10 * Low threshold
ZVP4105A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -50
E-Line TO92 Compatible VALUE -175 -520
20
UNIT V mA mA V mW C
625 -55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. BVDSS VGS(th) IGSS IDSS -50 -0.8 -2.0 10 -15 -60 -100 10 50 40 15 6 10 10 18 25 MAX. UNIT CONDITIONS. V V nA
A A
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
ID=-0.25mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-50V, VGS=0V VDS=-50V, VGS=0V, T=125C(2) VDS=-25V, VGS=0V VGS=-5V,ID=-100mA VDS=-25V,ID=-100mA
nA
Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2)(4) Common Source Output Capacitance (2)(4) Reverse Transfer Capacitance (2)(4) Rise Time (2)(3)(4) Fall Time (2)(3)(4) gfs Ciss Coss Crss
mS pF pF pF ns ns ns ns
VDS=-25V, VGS=0V, f=1MHz
Turn-On Delay Time (2)(3)(4) td(on) tr tf Turn-Off Delay Time (2)(3)(4) td(off)
VDD -30V, ID=-270mA
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3-435
( 4 )


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